Samsung 860 evo mz-n6e2t0bw / solid state drive / encrypted / 2TB / internal / m.2 2280 / sata 6GB/s / buffer: 2GB / 256-bit aes / tcg opal encryption 2.0
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Samsung 860 evo mz-n6e2t0bw / solid state drive / encrypted / 2TB / internal / m.2 2280 / sata 6GB/s / buffer: 2GB / 256-bit aes / tcg opal encryption 2.0
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Samsung 860 EVO MZ-N6E2T0BW / Solid state drive / encrypted / 2TB / internal / M.2 2280 / SATA 6GB/s / buffer: 2GB / 256-bit AES / TCG Opal Encryption 2.0 | MZ-N6E2T0BW
Χαρακτηριστικά
Γενικά Χαρακτηριστικά Σκληρού Δίσκου
- Τύπος Δίσκου: M.2
- Χωρητικότητα Αποθήκευσης: 2 TB
- Form Factor: 2.5-inch
Λεπτομέρειες
Product Specification
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Description The Samsung 860 EVO is specially designed for mainstream PCs and laptops with V-NAND and a robust algorithm-based controller. Samsung 860 EVO MZ-N6E2T0BW / Solid state drive / encrypted / 2TB / M.2 2280 / 256-bit AES / TCG Opal Encryption 2.0 | MZ-N6E2T0BWSpecial Features
Product Features
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Product Specification
| Device Type | Solid state drive - internal |
| Capacity | 2TB |
| Hardware Encryption | Yes |
| Encryption Algorithm | 256-bit AES |
| NAND Flash Memory Type | 3D multi-level cell (MLC) |
| Form Factor | M.2 2280 |
| Interface | SATA 6GB/s |
| Buffer Size | 2GB |
| Features | Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667 |
| Width | 22.15 mm |
| Depth | 80.15 mm |
| Height | 2.38 mm |
| Weight | 8 g |
| SSD Endurance | 1200TB |
| Drive Transfer Rate | 600 MBps (external) |
| Internal Data Rate | 550 MBps (read) / 520 MBps (write) |
| Maximum 4KB Random Write | 88000 IOPS |
| Maximum 4KB Random Read | 97000 IOPS |
| MTBF | 1,500,000 hours |
| Interfaces | 1 x SATA 6GB/s - M.2 Card |
| Compatible Bay | M.2 2280 |
| Power Consumption | 3 Watt (average) ¦ 4.5 Watt (maximum) |
| Service & Support | Limited warranty - 5 years |
| Min Operating Temperature | 0 °C |
| Max Operating Temperature | 70 °C |
| Shock Tolerance (operating) | 1500 g @ 0.5 ms half-sine |